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Semiconductor Components Industries, LLC, 2011
September, 2011 ?
Rev. 1
1
Publication Order Number:
BAS116TT1/D
BAS116TT1G
Switching Diode
Features
?
Low Leakage Current Applications
?
Medium Speed Switching Times
?
Available in 8 mm Tape and Reel
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA
= 25
°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
VR
75
V
Peak Forward Current
IF
200
mA
Peak Forward Surge Current
IFM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR?4 Board (Note 1)
TA
= 25
°C
Derated above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient (Note 1)
RJA
555
°C/W
Total Device Dissipation,
FR?4 Board (Note 2)
TA
= 25
°C
Derated above 25°C
PD
360
2.9
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient (Note 2)
RJA
345
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?4 @ Minimum Pad
2. FR?4 @ 1.0 ×
1.0 Inch Pad
http://onsemi.com
Device Package Shipping?
ORDERING INFORMATION
CASE 463
SOT?416
STYLE 2
MARKING
DIAGRAM
3
CATHODE
1
ANODE
BAS116TT1G SOT?416
(Pb?Free)
3000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
3
AE M
1
AE = Specific Device Code
M = Date Code
= Pb?Free Package
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